Light-matter interactions are fundamental in modern optoelectronics. In the past decade, the research has shown the promising role of the graphene in the optoelectronic field, advances that includes:
However, graphene has a weak optical absorption and needs extrinsic device architectures to exploit its broadband optical response.
By contrast, twisted bilayer graphene (TBG) represents a unique class of two-dimensional (2D) material in which a small twist-angle between two atom-thick layers of graphene generates a moiré superlattice with new potential properties.
This potential inflicts dramatic changes on the electronic spectra of the system, with an unprecedented tunability.
Moire supperlattice potential exhibits properties ressembling that of semiconductors but with:
All these properties make twisted bylayer graphene (TBG) and double twisted bilayer graphene (TDBG) promising candidates for a new generation of infrared and THz photodetection and emission devices.
This project is supported by the FLAG-ERA grant [PhotoTBG], by ICFO, RWTH Aachen and ETHZ.
